Rambler's Top100
 
 
Scientific schools in NSC  
Rzhanov A.V.
 

BIBLIOGRAPHY OF WORKS 1949-1968 1969-1979 since 1980
 
1980 | 1981 | 1982 | 1983 | 1984 | 1985 | 1986 | 1987 | 1988 | 1989 | 1990 | 1991 | 1993 | 2002

  1. Baklanov M.R. Rastvoryeniye monokristallov gyermaniya i kryemniya v parakh XeF2 / Baklanov M.R., Ryepinskii S.M., Rzhanov A.V. // Doklady Akadyemii nauk SSSR. - 1980. - T.253, vyp.4. - C.884-886. - Bibliogr.: 7 nazv.

  2. Vliyaniye ehlyektronnogo obluchyeniya na khollovskuyu podvizhnost' dyrok v invyersionnykh sloyakh MOP struktur / Guzyev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Fizika i tyekhnika poluprovodnikov. 1980. - T.14, vyp.4. - S.769-775. - Bibliogr.: 12 nazv.

  3. Vliyaniye ehlyektronnogo obluchyeniya na khollovskuyu podvizhnost' dyrok v invyersionnykh sloyakh MOP struktur so svyerkhtonkim diehlyektrikom / Guzyev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Myezhdunar. konf. po radiatsionnoi fizikye poluprovodnikov (Kiyev, 1980). - Kiyev, 1980. - S.133.

  4. Ovsyuk V.N. EHlyektrofizichyeskiye svoistva tonkikh plyenok poluprovodnikov / Ovsyuk V.N., Rzhanov A.V.; Ministyerstvo vysshyego i sryednye-spyetsial'nogo obrazovaniya RSFSR, Novosibirskii gosudarstvyennyi univyersityet im. Lyeninskogo komsomola. - Novosibirsk, 1980. - 95 s.

  5. Ol'shanyetskii B.Z. Odnomyernaya pyeriodichyeskaya struktura na vysokoindyeksnykh povyerkhnostyakh kryemniya / Ol'shanyetskii B.Z., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1980. - T.32, vyp.5. - S.337-340. - Bibliogr.: 10 nazv.

  6. Opryedyelyeniye spyektral'noi zavisimosti pripovyerkhnostnogo fotovozbuzhdyeniya za krayem fundamyental'nogo pogloscyeniya poluprovodnika s ispol'zovaniyem PZS / Klyaus KH.I., Ovsyuk V.N., Rzhanov A.V., Syerdyuk YU.N., CHyeryepov YE.I. // 7-i Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti poluprovodnikov i granitsye razdyela poluprovodnik-diehlyektrik. - Novosibirsk, 1980. - CH.1. - S.89-90.

  7. Pripovyerkhnostnaya oblast' prostranstvyennogo zaryada gyermaniya pri uchyetye kvantovykh ehffyektov / Kvon Z.D., Nyeizvyestnyi I.G., Ovsyuk V.N., Rzhanov A.V. // 7-i Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti poluprovodnikov i granitsye razdyela poluprovodnik-diehlyektrik. - Novosibirsk, 1980. - CH.1. - S.78-79. - Bibliogr.: 2 nazv.

  8. Radiatsionnyye ehffyekty v poluprovodnikakh pri malykh dozakh obluchyeniya chastitsami / Bolotov V.V., Korotchyenko V.A., Mamontov A.P., Rzhanov A.V., Smirnov L.S., SHaimyeyev S.S. // Fizika i tyekhnika poluprovodnikov. - 1980. - T.14, Vyp.2. - S.2257-2260. - Bibliogr.: 9 nazv.

  9. Rzhanov A.V. Myetody kontrolya sostoyaniya povyerkhnosti i problyemy ehpitaksii iz molyekulyarykh puchkov / Rzhanov A.V., Styenin S.I., Ol'shanyetskii B.Z. // Mikroehlyektronika. - 1980. - T.9, vyp.4. - S.292-301. - Bibliogr.: 56 nazv.

  10. Rzhanov A.V. EHlyektronnyye svoistva tonkikh plyenok poluprovodnikov: uchyebnoye posobiye / Rzhanov A.V. - Novosibirsk: NGU, 1980. - 95 s.

  11. Influence of electron irradiation on the Hall mobility of holes in inversion layers of metal–oxide–semiconductor structures / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Soviet Physics - Semiconductors. - 1980. - V.14, N 4. - P.451-454. - Bibliogr.: 12 ref.

  12. Ol'shanetski B.Z. One-dimensional periodic structure on high-index silicon surfaces / Ol'shanetski B.Z., Rzhanov A.V. // Journal of Experimental and Theoretical Physics. Letters. - 1980. - V.32, N 5. - P.313-315. - Bibliogr.: 10 ref.

  13. Radiation effects in semiconductors at low particle-radiation doses / Bolotov V.V., Korotchenko V.A., Mamontov A.P., Rzhanov A.V., Smirnov L.S., Shameev S.S. // Soviet Physics - Semiconductors. - 1980. - V.14, N 11. - P.1337-1339. - Bibliogr.: 9 ref.

  14. Ryed.: Algoritmy i programmy dlya chislyennogo ryeshyeniya nyekotorykh zadach ehllipsomyetrii / Burykin I.G., Vorob'yeva L.P., Grushyetskii V.V. i dr.; otv. ryed. Rzhanov A.V. - Novosibirsk: Nauka, Sib. otd-niye, 1980. - 186 s.

  15. Ryed.: 7-i Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti poluprovodnikov i granitsye razdyela poluprovodnik-diehlyektrik. V 2 ch. CH.1. / otv. ryed. Rzhanov A.V. - Novosibirsk, 1980. - 163 s.

  16. Ryed.: Sovryemyennyye problyemy ehllipsomyetrii: sb. statyei / pod. ryed. Rzhanova A.V.; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka, 1980. - 192 s.

  17. Rzhanov A.V. Myetody kontrolya sostoyaniya povyerkhnosti i problyemy ehpitaksii iz molyekulyarnykh puchkov / Rzhanov A.V., Styenin S.I., Ol'shanyetskii B.Z. // Mikroehlyektronika. - 1980. - T.9., vyp.4. - S. .

  18. Rzhanov A.V. Covyershyenstvovat' trud uchyenogo: iz opyta raboty kollyektiva Instituta fiziki poluprovodnikov Sibirskogo otdyelyeniya AN SSSR / Rzhanov A.V., Svitashyev K. // Vyechyernii Novosibirsk. - 1981. - 24 marta.

  19. SVCH nagryev kak myetod tyermoobrabotki poluprovodnikov / Rzhanov A.V., Gyerasimyenko N.N., Vasil'yev S.V., Obodnikov V.I. // Pis'ma v zhurnal tyekhnichyeskoi fiziki. - 1981. - T.7, vyp.20. - S.1221-1223. - Bibliogr.: 5 nazv.

  20. Microwave heating as a means of semiconductor heat treatment / Rzhanov A.V., Gerasimenko N.N., Vasilev S.V., Obodnikov V.I. // Soviet Physics - Technical Physics Letters. - 1981. - V.7, N 10. - P.521-522. - Bibliogr.: 5 ref.

  21. Ryed.: EHllipsomyetriya i polyarizovannyi svyet: pyer. s angl. / Azaam R., Bashara N.; pod ryed. Rzhanova A.V., Svitashyeva K.K. - M.: Mir, 1981. - 583 c.

  22. Gyershinskii A.YE. Obrazovaniye plyenok silitsidov na kryemnii / Gyershinskii A.YE., Rzhanov A.V., CHyeryepov YE.I. // Povyerkhnost': fizika, khimiya, myekhanika. - 1982. - N 2. - S.1-12. - Bibliogr.: 34 nazv.

  23. Gyershinskii A.YE. Tonkoplyenochnyye silitsidy v mikroehlyektronikye / Gyershinskii A.YE., Rzhanov A.V., CHyeryepkov YE.I. // Mikroehlyektronika. - 1982. - T.11, vyp.2. - S.83-94. - Bibliogr.: 65 nazv.

  24. Klyaus KH.I. Isslyedovaniye fotogyenyeratsii za krayem fundamyental'nogo pogloscyeniya kryemniya v priborakh s zaryadovoi svyaz'yu / Klyaus KH.I., Ovsyuk V.N., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. 1982. - T.16, Vyp.7. - S.1239-1343. - Bibliogr.: 12 nazv.

  25. Rzhanov A.V. Analiz blizhnyego poryadka v plyenkakh nitrida kryemniya / Rzhanov A.V., Zaitsyev B.N., EHdyel'man F.L. // Doklady Akadyemii nauk SSSR. - 1982. - T.266, vyp.6. - C.1381-1384. - Bibliogr.: 10 nazv.

  26. Rzhanov A.V. O nyekotorykh pyerspyektivakh ehffyektivnosti nauchnykh isslyedovanii / Rzhanov A.V. // Myetodologichyeskiye i filosofskiye problyemy fiziki. - Novosibirsk: Nauka, 1982. - S.22-31.

  27. Rzhanov A.V. O nyekotorykh putyakh povyshyeniya ehffyektivnosti fundamyental'nykh nauchnykh isslyedovanii // Vyestnik Akadyemii nauk SSSR. - 1982. - N 2. - C.42-47.

  28. Rzhanov A.V. Poluprovodnikovaya mikroehlyektronika i tyekhnichyeskii progryess / Rzhanov A.V., Svitashyev K.K. // Mikroehlyektronika. - 1982. - T.11, vyp.6. - S.499-511. - Bibliogr.: 21 nazv.

  29. Rzhanov A.V. EHllipsomyetrichyeskii myetod opryedyelyeniya kachyestva obrabotki povyerkhnosti / Rzhanov A.V., Svitashyeva S.N., Svitashyev K.K. // Doklady Akadyemii nauk SSSR. - 1982. - T.267, vyp.2. - C.373-376. - Bibliogr.: 10 nazv.

  30. Myetodologichyeskiye i filosofskiye problyemy fiziki / sost.: Skrinskii A.N., Kutatyeladzye S.S., Rzhanov A.V. - 1982. - 336 s.

  31. EHlyektronnyye protsyessy v tonkikh plyenkakh / Alyeksandrov L., Kravchyenko A., Nyeizvyestnyi I., Rzhanov A., Sinitsa S., Styenin S., CHaplik A. // Nauka v Sibiri. - 1982. - N 32. - S.1,3.

  32. Gershinskii A.E. Silicide thin films in microelectronics / Gershinskii A.E., Rzhanov A.V., Cherepov E.I. / Sov. Microelectron. - 1982. - V.11, N 2. - P.51-59. - Bibliogr.: 65 ref.

  33. Investigation of optical generation of carriers beyond the fundamental adsorption edge of silicon in charge-coupled devices // Klyaus Kh.I., Ovsyuk V.N., Rzhanov A.V., Serdyuk Yu.N., Cherepov E.I. // Soviet Physics - Semiconductors. - 1982. - V.16, N 7. - P.791-794. - Bibliogr.: 12 ref.

  34. Ryed.: Byelyi V.I. Nitrid kryemniya v ehlyektronikye / Byelyi V.I., Vasil'yeva L.L., Griscyenko V.A.; otv. ryed. Rzhanov A.V. - Novosibirsk: Nauka. Sib. otd-niye, 1982. - 200 c.

  35. Ryed.: Impul'snyi otzhig poluprovodnikovykh matyerialov / Dvuryechyenskii A.A., Kachurin G.A., Nidayev YE.D., Smirnov L.S.; otv. ryed. Rzhanov A.V. - M: Nauka, 1982. - 208 s. - Bibliogr. v kontsye glav.

  36. OZHYE i EHSKHA- profilirovaniye plyenok nitrida kryemniya poslye okislyeniya / ZHdan P.A., Nizovskii A.I., Rzhanov A.V., EHdyel'man F.L. // Doklady Akadyemii nauk SSSR. - 1983. - T.273, vyp.2. - S.334-336. - Bibliogr.: 12 nazv.

  37. Rzhanov A.V. Grafichyeskii myetod intyerpritatsii ryezul'tatov ehllipsomyetrichyeskikh izmyeryenii na shyerokhovatykh povyerkhnostyakh / Rzhanov A.V., Svitashova S.N, Svitashyev K.N. // Doklady Akadyemii nauk SSSR. - 1983. - T.273, vyp.5. - S.1123-1126. - Bibliogr.: 6 nazv.

  38. Rzhanov A.V. MDP-mikroehlyektronika. Problyemy i pyerspyektivy razvitiya: nauch. soobscyeniye // Vyestnik Akadyemii nauk SSSR. - 1983. - N 2. - C.98-106.

  39. Rzhanov A.V. Tryebuyetsya utochnit' pryedmyet i ponyatiye informatiki // Nauka v Sibiri. - 1983. - 8 syent. (N 35). - S.2.

  40. Rzhanov A.V. EHllipsomyetrichyeskiye myetody isslyedovaniya povyerkhnosti i tonkikh plyenok / Rzhanov A.V., Svitashyev K.K.; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov // EHllipsomyetriya - myetod isslyedovaniya povyerkhnosti: sb. statyei. - Novosibirsk: Nauka: Sib. otd-niye, 1983. - S.3-6.

  41. Bentsion Moiseevich Vul: on his eightieth birthday 1983 / Nikol'skii N.G., Plotnikov A.F., Rzhanov A.V., Shotov A.P. // Soviet Physics - Uspekhi. - 1983. - V.26, N 5. - P.462-463.

  42. Ryed.: Rzhanov A.V. EHllipsomyetriya - myetod isslyedovaniya povyerkhnosti: sb. matyer. vsyesoyuzn. konf. / Otv. ryed. Rzhanov A.V.; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka, Sib. otd-niye, 1983. - 180 s.

  43. Lazyernyye myetody ochistki matyerialov ehlyektronnoi tyekhniki / YAtsyenko A.S., Kosolobov S.N., Rzhanov A.V., SCyekochikhin YU.M., Ostapovskii L.M. - M.: TSNII "EHlyektronika", 1984. - 60 c. - Bibliogr.: 15 nazv.

  44. Rzhanov A.V. Molyekulyarnaya ehpitaksiya: sostoyaniye voprosa, problyemy i pyerspyektivy razvitiya / Rzhanov A.V., Styenin S.I.; otv. ryed. Alyeksandrov L.N.; Akad. nauk SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov, In-t nyeorganichyeskoi khimii // Rost poluprovodnikovykh kristallov i plyenok: matyer. VI vsyesoyuzn. konf. (Novosibirsk, 1982 g.). - Novosibirsk: Nauka: Sibirskoye otd-niye, 1984. - CH.1. - S.5-34. - Bibliogr.: 92 nazv.

  45. Rzhanov A.V. Pryedyel'nyye ehnyergyetichyeskiye kharaktyeristiki pryamogo pryeobrazovaniya solnyechnogo izluchyeniya / Rzhanov A.V., CHukova YU.P. // Doklady Akadyemii nauk SSSR. - 1984. - T.276, vyp.6. - S.1385-1388. - Bibliogr.: 15 nazv.

  46. Ryed.: EHlyektronnyye protsyessy v poluprovodnikakh s oblastyami prostranstvyennogo zaryada / otv. ryed. Rzhanov A.V., Ovsyuk V.N. - Novosibirsk: Nauka, 1984. - 254 c.

  47. Analitichyeskaya apparatura i tyekhnologichyeskoye oborudovaniye dlya molyekulyarno-luchyevoi ehpitaksii / Anashin, V.V., YEmyelin G.G., Kantyer B.Z., Migal' V.P., Pogodayev YE.YA., Pchyelyakov O.P., Rzhanov A.V.,Styenin S.I., Toropov A.I. - Novosibirsk, 1985. - 59 s. - Bibliogr.: 229 nazv. - (Pryeprint / AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - 1985. - N 1).

  48. Ustanovka dlya ehpitaksii iz molyekulyarnykh puchkov s avtomatichyeskim ehllipsomyetrom / Arkhipyenko A.V., Blyumkina YU.A., Lamin M.A., Pchyelyakov O.P., Sokolov L.V., Styenin S.I., Kozlov N.I., Rzhanov A.V. // Povyerkhnost': fizika, khimiya, myekhanika. - 1985. - Vyp.1. - S.93-96. - Bibliogr.: 6 nazv.

  49. Isslyedovaniye spyektrov kombinatsionnogo rassyeyaniya svyeta polikristallichyeskikh plyenok khal'kogyenidov svintsa v oblasti valyentnykh kolyebanii adsorbirovannogo kisloroda / Ipatova I.P., Ivanov YE.V., Kosolobov S.N., Rzhanov A.V., Subashiyev A.V., SCyekochikhin YU.M. // Fizika i tyekhnika poluprovodnikov. - 1986. - T.20, Vyp.2. - S.243-247. - Bibliogr.: 9 nazv.

  50. Mikromorfologiya ehpitaksial'nykh plyenok InAs pri rostye iz molyekulyarnykh puchkov na podlozhkakh GaAs / Kantyer YU.O., Toropov A.I., Rzhanov A.V., Styenin S.I., Gavrilova T.A. // Povyerkhnost': fizika, khimiya, myekhanika. - 1986. - Vyp.9. - S.83-87. - Bibliogr.: 11 nazv.

  51. Rzhanov A.V. II myezhdunarodnaya konfyeryentsiya po modulirovannym poluprovodnikovym strukturam (Kioto, YAponiya) / Rzhanov A.V. // Mikroehlyektronika. - 1986. - T.15, vyp.3. -- S.195-202.

  52. Sdvig kraya pogloscyeniya v obluchyennom amorfnom nitridye kryemniya / Gritsyenko V.A., Rzhanov A.V., Sinitsa S.P., Fyedchyenko V.I., Fyeofanov G.N. // Doklady Akadyemii nauk SSSR. - 1986. - T.287, vyp.6. - C.1381-1383. - Bibliogr.: 10 nazv.

  53. SHirokii vzglyad / Rzhanov A., Nyeizvyestnyi I., Skubnyevskii Z., SCyekochikhina R., Mardyemov A. // Nauka v Sibiri. - 1986. - 31 iyunya. - S.7.
    O Svitashyevye K.K.

  54. Ryets. na kn. Pshyenitsyn V.I. EHllipsomyetriya v fiziko-khimichyeskikh poslyedovaniyakh / ryets. Rzhanova A.V.; Pshyenitsyn V.I. - L.: KHimiya, 1986. - 152 c.

  55. Investigation of the Raman scattering spectra of polycrystalline lead chalcogenide films in the region of valence vibrations of adsorbed oxygen / Ipatova I.P., Ivanov E.V., Kosolobov S.N., Subashiev A.V., Shchekochikhin Yu.M., Rzhanov A.V. // Soviet Physics Semiconductors. - 1986. - N 20, N 2. - P.153-155. - Bibliogr.: 9 ref.

  56. Molecular beam epitaxycal growth of germanium and silicon films: surface structure, film defects and properties / Rzhanov A.V., Stenin S.I., Pchelyacov O.P., Katner B.Z. // Thin Solid Films. - 1986. - Vol.139, N 2. - P.169-175. - Bibliogr.: 12 ref.

  57. Shift of the absorption edge in irradiated amorphous silicon nitride / Gritsenko V.A., Rzhanov A.V., Sinitsa S.P., Fedchenko V.I., Feofanov G.N. // Soviet Physics - Doklady. - 1986. - V.31, N 4. - P.341-342. - Bibliogr.: 10 ref.

  58. Structure of annealed polycrystalline silicon films. I. Recrystallization / Edelman F. L., Heydenreich J., Hoehl D., Matthai J., Melnik I., Rzhanov A., Voelskov M., Werner P. // Physica status solidi. A. - 1986. - V.98, N 2. - P.383-390. - Bibliogr.: 18 ref.

  59. Ryets.: Rzhanov A.V. EHllipsomyetriya v fiziko-khimichyeskikh poslyedovaniyakh / ryets. Rzhanova A.V.; Pshyenitsyn V.I. - L.: KHimiya, 1986. - 152 c.

  60. Edit.: Electronic Structure and Optical Properties of Silicon Nitride, Silicon Nitride in Electronics / edited by A.V.Rzhanov. - New York: Elsevier, 1986. - 234 p.

  61. Edit.: Silicon Nitride in Electronics / edited by A.V.Rzhanov. - New York: Elsevier, 1986. - 180 p.

  62. V'yun V.A. Akustoehlyektronnyye myetody isslyedovaniya povyerkhnosti poluprovodnikov / V'yun V.A., Rzhanov A.V., YAkovkin I.V.; ryed. Bogdanova S.V.; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk, 1987. - 126 c. - Bibliogr.: 229 nazv.

  63. Molyekulyarno-luchyevaya ehpitaksiya kak myetod sozdaniya modulirovannykh poluprovodnikovykh struktur / Nyeizvyestnyi I.G., Rzhanov A.V., Styenin S.I., SHumskii V.N. // Problyemy kristallografii. - M.: Nauka, 1987. - C.190-214. - Bibliogr.: 88 nazv.

  64. Rzhanov A.V. Kontrol' paramyetrov svyerkhryeshyetok v protsyessye ikh poluchyeniya myetodom ehllipsomyetrii / Rzhanov A.V., Svitashyev A.G., Mardyezhov A.S. // Doklady Akadyemii nauk SSSR. - 1987. - T.297, vyp.3. - C.604-607. - Bibliogr.: 5 nazv.

  65. Monitoring of superlattice parameters during ellipsometric measurements / Rzhanov A.V., Svitashev K.K., Mardezhov A.S., Shvets V.A. // Soviet Physics - Doklady. - 1987. - V.32, N 11. - P.930-932. - Bibliogr.: 5 ref.

  66. Ryed.: EHllipsomyetriya: tyeoriya, myetody, prilozhyeniya: matyerialy konf. (Novosibirsk, 9-11 iyulya 1985 g.) / Otv. ryed. Rzhanov A.V.; Il'ina L.A. - Novosibirsk: Nauka, Sib. otd-niye, 1987. - 192 s.

  67. Gistyeryezis vysokochastotnogo ehffyekta polya v strukturakh Al/Sio2/ Si / V'yun V.A., Rzhanov A.V., YUmashyev V.N., YAkovkin I.B. // EHlyektronnyye protsyessy na povyerkhnosti i v monokristallichyeskikh sloyakh poluprovodnikov, IX vsyesoyuzn. simpozium (Novosibirsk, 15-17 iyunya 1988 g.): tyezisy dokl. - Novosibirsk, 1988. - CH.1. - C.102-103.

  68. Gurtov V.A. Modyelirovaniye i ehkspyerimyental'noye isslyedovaniye krayevogo lavinnogo proboya v MDP strukturakh / Gurtov V.A., Rzhanov YU.A., Syergyeyev M.S. // Tyezisy dokl. vsyesoyuz. sovyesc. po lavinnym fil-priboram (Rostov-YAroslavl'skii, 9-14 okt.). - Rostov-YAroslavl'skii, 1988. - S.11.

  69. Osnovnoye uravnyeniye ehllipsomyetrii dlya svyerkhryeshyetok / Rzhanov A.V., Svitashyev K.K., Mardyezhov A.S., SHvyets V.A. // Doklady Akadyemii nauk SSSR. - 1988. - T.298, vyp.4. - S.862-866. - Bibliogr.: 5 nazv.

  70. Povyedyeniye monoatomnykh stupyenyei na povyerkhnosti kryemniya (III) pri sublimatsii v usloviyakh nagryeva ehlyektrichyeskim tokom / Latyshyev A.V., Asyeyev A.L., Krasil'nikov A.B., Rzhanov A.V., Styenin S.I. // Doklady Akadyemii nauk SSSR. - 1988. - T.300, vyp.1. - C.84-88. - Bibliogr.: 16 nazv.

  71. Behavior of monatomic steps on the silicon (111) surface upon sublimation when heated by an electric current / Latyshev A.V., Aseev A.L., Krasil'nikov A.B., Rzhanov A.V., Stenin S.I. // Soviet Physics - Doklady. - 1988. - V.33, N 5. - P.352-354. - Bibliogr.: 16 ref.

  72. Fundamental equation of ellipsometry for superlattices // Rzhanov A.V., Svitashev K.K., Mardezhov A.S., Shvets V.A. // Soviet Physics - Doklady. - 1988. - V.33, N 2. - P.146-148. - Bibliogr.: 5 ref.

  73. Ryed.: Sovryemyennyye problyemy ehllipsomyetrii / otv. ryed. Rzhanov A.V.; Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka. Sib. otd-niye, 1988. - 192 s.

  74. Ryed.: Sovryemyennyye problyemy fizichyeskoi khimii povyerkhnosti poluprovodnikov: cb. nauch. tr. / otv. ryed. A.V.Rzhanov, S.M.Ryepinskii; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka. Sib. otd-niye, 1988. - 240 c.

  75. Edit.: Silicon nitride in electronics / Bolyi V.I., Vasilyeva L.L., Ginovker A.S.; edited by A.V.Rzhanov. - Amsterdam: Elsevier, 1988. - 263 p. - Bibliogr.: 34 ref.

  76. Mul'tistabil'nost' vysokochastotnogo ehffyekta polya v strukturakh AI/ZnO/SiO2 / V'yun V.A., Rzhanov A.V., YUmashyev V.N., YAkovkin I.B. // Povyerkhnost': fizika, khimiya, myekhanika. - 1989. - Vyp.6. - S.110-115. - Bibliogr.: 19 nazv.

  77. Pamyati Il'i Abramovicha Gyelinskogo / Balakiryev M.K., Bogdanov S.V., Dykhnye A.M., Rzhanov A.V., Pokrovskii V.G., CHaplik A.V., Pokrovskii V.L., Savvinykh S.K., Surdutovich G.I. // Fizika tvyerdogo tyela. -1989. - T.31, N 6. - S.312-313. - Bibliogr.: 10 ref.

  78. Rzhanov A.V. Skol'ko mozhno otstaivat' ...: blyesk nauchnykh idyei i niscyeta tyekhnichyeskogo progryessa / Rzhanov A.V., Svitashyev K., Styenin S. // Izvyestiya. - 1989. - 3 okt. - S.3.

  79. Il'ya Abramovich Gilinski / Balakirev M.K., Batyev E.G., Bogdanov S.V., Dykhne A.M., Rzhanov A.V., Pokrovski V.L., Chaplik A.V., Savvinykh S.K., Surdutovich G.I. // Soviet Physics - Solid State. - 1989. - V.31, N 6. - P.1096-1097. - Bibliogr.: 10 ref.

  80. Sostav i stroyeniye amorfnogo nitrida kryemniya, obogascyennogo kryemniyem / Bolotin V.P., Rzhanov A.V., Bryutov I.A., Gritsyenko V.A. // Doklady Akadyemii nauk SSSR. - 1990. - T.310, vyp.1. - C.114-117. - Bibliogr.: 13 nazv.

  81. Alyeksandrov Kirill Syergyeyevich / Barkov L.M., Vainshtyein B.K., Kruglyakov YE.P., Rzhanov A.V., Ryutov D.D., Simonov V.I., Skrinskii A.N., SHuvalov L.A., CHirikov B.V. // Uspyekhi fizichyeskikh nauk. - 1991. - T.161, N 1. - S.189-190.

  82. Kirill Sergeevich Aleksandrov: on his sixtieth birthday / Barkov LM., Vainshtein B.K., Kruglyakov E.P., Rzhanov A.V., Ryutov D.D., Simonov V.I., Skrinskii A.N., Shuvalov L.A., Chirikov B.V. // Soviet Physics - Uspekhi. - 1991. - V.34, N 1. - P.98-99.

  83. Ryed.: Ryepinskii S.M. Vvyedyeniye v khimichyeskuyu fiziku povyerkhnosti tvyerdykh tyel / Otv. ryed. Rzhanov A.V.; Ros. akad. nauk, Sib. otd-niye, I-t fiziki poluprovodnikov. - Novosibirsk : Nauka, 1993. - 222 s.

  84. Rzhanov A.V. O sobytiyakh, faktakh i lyudyakh / Rzhanov A.V. // Slyed na zyemlye. Soldat, Uchyenyi, Uchityel'. - Novosibirsk: Izdatyel'stvo SO RAN, 2002. - C.5-123.
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Posyescyeniye N 975 s 12.12.2006