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Rzhanov A.V.
 

BIBLIOGRAPHY OF WORKS 1949-1968 1969-1979 since 1980
 
1969 | 1970 | 1971 | 1972 | 1973 | 1974 | 1975 | 1976 | 1977 | 1978 | 1979

  1. Alyeksandrov L.N. Poluchyeniye i izuchyeniye svoistv poluprovodnikovykh plyenok / Alyeksandrov L.N., Rzhanov A.V. // Izvyestiya AN SSSR. Nyeorganichyeskiye matyerialy. - 1969. - T.5, N 4. - C.652-672. - Bibliogr.: 69 nazv.

  2. Klimyenko EH.A. EHlyektrofizichyeskiye svoistva monokristallichyeskikh sloyev Si na nyeoriyentiruyuscikh izoliruyuscikh podlozhkakh / Klimyenko EH.A., Rzhanov A.V., Zakharov A.K. // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.86. - Bibliogr.: nyet.

  3. Ovsyuk V.N. O kvazinyepryeryvnom spyektrye urovnyei v zapryescyennoi zonye na povyerkhnosti poluprovodnika / Ovsyuk V.N., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1969. - T.3, Vyp.2. - S.294-297. - Bibliogr.: 11 nazv.

  4. Pan'kin V.G. Fotoehlyektrichyeskiye yavlyeniya na granitsye myezhdu monokristallichyeskimi blokami gyermaniya / Pan'kin V.G., Rzhanov A.V. Svitashyev K.K. // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.39. - Bibliogr.: nyet.

  5. Pokrovskaya S.V. Vliyaniye adsorbtsii syerovodoroda na povyerkhnostnyye paramyetry gyermaniya / Pokrovskaya S.V., Rzhanov A.V.; AN SSSR // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.36. - Bibliogr.: nyet.

  6. Rzhanov A.V. Bol'shoi stazh molodoi nauki / Rzhanov A.V., Rautian S.G. // Za nauku v Sibiri. - 1969. - 15 yanv. - S.3, 6-7.
    O problyemakh fiziki poluprovodnikov i zadachakh, stoyascikh pyeryed uchyenymi Instituta fiziki poluprovodnikov Sibirskogo otdyelyeniya AN SSSR.

  7. Rzhanov A.V. Vliyaniye adsorbtsii vodoroda na ehlyektrofizichyeskiye paramyetry povyerkhnosti gyermaniya / Rzhanov A.V., Lutsyevich L.V., Nyeizvyestnyi I.G. // Fizika i tyekhnika poluprovodnikov. - 1969. - T.3, N 3. - C.437-440. - Bibliogr.: 5 nazv.

  8. Rzhanov A.V. Isslyedovaniye protsyessov rassyeyaniya i zakhvata na povyerkhnosti gyermaniya povyshyennoi chistoty / Rzhanov A.V., Migal' V.P., Migal' N.N. // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.38.

  9. Rzhanov A.V. Isslyedovaniye ryeal'noi povyerkhnosti gyermaniya v svyerkhvysokom vakuumye / Rzhanov A.V., Lutsyevich L.V. // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.32.

  10. Rzhanov A.V. O ehnyergyetichyeskom spyektrye povyerkhnostnykh sostoyanii v gyermanii / Rzhanov A.V., Migal' V.P., Migal' N.N. // Fizika i tyekhnika poluprovodnikov. - 1969. - T.3, N 9. - S.1333-1337. - Bibliogr.: 11 nazv.

  11. Rzhanov A.V. Osobyennosti povyerkhnostnykh ehlyektronnykh protsyessov pri bol'shoi shirinye zapryescyennoi zony / Rzhanov A.V. // III Vsyesoyuznyi simpozium po ehlyektronnym protsyessam na povyerkhnosti i v tonkikh monokristallichyeskikh sloyakh poluprovodnikov (Novosibirsk, 23-27 iyunya 1969 g.): tyezisy dokl. - Novosibirsk, 1969. - S.3-4. - Bibliogr.: nyet.

  12. Rzhanov A.V. Povyerkhnostnoye rassyeyaniye v osobo chistykh obraztsakh gyermaniya / Rzhanov A.V., Migal' V.P., Migal' N.N. // Fizika i tyekhnika poluprovodnikov. - 1969. - T.3, N 2. - S.231-237. - Bibliogr.: 13 nazv.

  13. Rzhanov A.V. Pogloscyeniye IK-izluchyeniya povyerkhnostnymi sostoyaniyami pri ponizhyennykh tyempyeraturakh / Rzhanov A.V., Sinyukov M.P. // Fizika i tyekhnika poluprovodnikov. - 1969. - T.3, N 1. - S.52. - Bibliogr.: nyet.

  14. Rzhanov A.V. Fizika povyerkhnosti i tonkikh plyenok poluprovodnikov: kurs lyektsii / Rzhanov A.V. - Novosibirsk, 1969. - CH.1. - 100 s.
    Oglavlyeniye knigi

  15. EHlyektrofizichyeskiye kharaktyeristiki monokristallichyeskikh sloyev gyermaniya i granits razdyela sloyev s nyeoriyentiruyuscimi podlozhkami / Rzhanov A.V., Alyeksandrov L.N., Klimyenko YE.A., Zakharov A.K., Klimyenko A.G. // Trudy IX myezhdunar. konf. po fizikye poluprovodnikov (Moskva, 23-28 iyulya 1968). - L.: Nauka, 1969. - CH.1. - S.520-524. - Bibliogr.: 6 nazv.

  16. Ovsyuk V.N. Quasicontinuous spectrum of levels in the forbidden band at the surface of a semiconductor / Ovsyuk V.N., Rzhanov A.V. // Soviet Physics: Semiconductors. - 1969. - V.3, N 2. - P.250-251. - Bibliogr.: 11 ref.

  17. Rzhanov A.V. Absorption of infrared radiation by surface states at low temperatures / Rzhanov A.V., Sinyukov M.P. // Soviet Physics: Semiconductors. - 1969. - V.3, N 1. - P.39-42. - Bibliogr.: 0 ref.

  18. Rzhanov A.V. Influence of the adsorption of hydrogen on the electrical properties of the surface of germanium / Rzhanov A.V., Lutsevich L.V., Neizvestny I.G.// Soviet Physics: Semiconductors. - 1969. - V.3, N 3. - P.370-372. - Bibliogr.: 5 ref.

  19. Rzhanov A.V. Investigations of scattering and trapping processes of carriers in ultra pure germanium films / Rzhanov A.V., Migal W.P., Migal N.N. // Journal of Vacuum Science and Technology. - 1969. - V.6, N 4. - P.566-568.

  20. Rzhanov A.V. Surface scattering in very pure germanium samples / Rzhanov A.V., Migal V.P., Migal N.N. // Soviet Physics: Semiconductors. - 1969. - V.3, N 2. - P.190-195. - Bibliogr.: 13 ref.

  21. Pan'kin V.G. O nyekotorykh osobyennostyakh spyektral'nogo raspryedyelyeniya fotoprovodimosti gyermaniya v oblasti sobstvyennogo pogloscyeniya / Pan'kin V.G., Rzhanov A.V., Svitashyev K.K. // Fizika i tyekhnika poluprovodnikov. - 1970. - T.4, N 4. - S.679-684. - Bibliogr.: 14 nazv.

  22. Rzhanov A.V. O bystrykh povyerkhnostnykh sostoyaniyakh na silanirovannom gyermanii / Rzhanov A.V., Kovalyevskaya T.I. // Fizika i tyekhnika poluprovodnikov. - 1970. - T.4, N 2. - S.321-324. - Bibliogr.: 7 nazv.

  23. Rzhanov A.V. Fizika povyerkhnosti i tonkikh plyenok poluprovodnikov: kurs lyektsii / Rzhanov A.V. - Novosibirsk, 1970. - CH.2. - 163 s.
    Oglavlyeniye knigi

  24. Pankin V.G. Some features of the photoconductivity spectrum of germanium in the fundamental absorption region / Pankin V.G., Rzhanov A.V. , Svitashev K.K. // Soviet Physics: Semiconductors. - 1970. - V.4, N 4. - P.575-579. - Bibliogr.: 14 ref.

  25. Isslyedovaniye granitsy razdyela gyermanii-plyenka tyermichyeskoi dvuokisi gyermaniya / Drozdov V.N., Kovalyevskaya t.I., Rzhanov A.V., Svitashyev K.K. // IV Vsyesoyuznoye sovyescaniye po ehlyektronnym yavlyeniyam na povyerkhnosti poluprovodnikov (Kiyev, 26-28 oktyabrya 1971 g.): tyezisy dokl. - Kiyev, 1971. - S.44.

  26. Isslyedovaniye struktury pyeryekhodnogo sloya v sistyemye gyermanii - plyenka dvuokisi kryemniya myetodom IK-spyektroskopii MNPVO / Kovalyevskaya T.I., Nyestyerova A.V., Rzhanov A.V., Svitashyev K.K. // Fizika i tyekhnika poluprovodnikov. - 1971. - T.5., N 9. - S.1720-1724. - Bibliogr.: 12 nazv.

  27. Pan'kin V.G. Ryelaksatsiya ehffyekta polya na gyermanii / Pan'kin V.G., Rzhanova YE.S., Rzhanov A.V. // IV Vsyesoyuznoye sovyescaniye po ehlyektronnym yavlyeniyam na povyerkhnosti poluprovodnikov (Kiyev, 26-28 oktyabrya 1971 g.): tyezisy dokl. - Kiyev, 1971. - S.3-4.

  28. Rzhanov A.V. Tryebovaniye k poluprovodnikovym matyerialam, primyenyayuscimsya v radioehlyektronikye / Rzhanov A.V. // Protsyessy sintyeza i rosta kristallov i plyenok poluprovodnikovykh matyerialov. - Novosibirsk. 1971. - S.7-14.

  29. Rzhanov A.V. EHlyektronnyye protsyessy na povyerkhnosti poluprovodnikov / Rzhanov A.V. - M.: Nauka, 1971. - 480 s. - Bibliogr.: 272 nazv.
    Oglavlyeniye knigi

  30. Nyeizvyestnyi A.V. Osobyennosti protsyessa povyerkhnostnoi ryekombinatsii na gyermanii pri nyekotorykh vozdyeistviyakh / Nyeizvyestnyi A.V., Pokrovskaya S.V., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1972. - T.6, N 2. - S.329-333. - Bibliogr.: 8 nazv.

  31. Novyi sposob poluchyeniya monokristallichyeskikh sloyev kryemniya na nyeoriyentiruyuscikh podlozhkakh / Klimyenko EH.A., Klimyenko A.G., Rzhanov A.V., Ibragimov R.YU., Alyeksandrov L.N. // III simpozium po protsyessam rosta i sintyeza poluprovodnikovykh kristallov i plyenok (Novosibirsk, 12-17 iyunya, 1972 g.): tyezisy dokl. - Novosibirsk, 1972. - S.185.

  32. Rzhanov A.V. Novyi funktsional'nyi poluprovodnikovyi pribor s pyeryenosom zaryada // Mikroehlyektronika. - 1972. - T.1, vyp.1. - S.46-54. - Bibliogr.: 6 nazv.

  33. Rzhanov A.V. O bystrykh povyerkhnostnykh sostoyaniyakh na silanirovannom gyermanii / Rzhanov A.V., Kovalyevskaya T.I. // Fizika i tyekhnika poluprovodnikov. - 1972. - T.4, N 2. - S.321-324. - Bibliogr.: 7 nazv.

  34. Rzhanov A.V. KHaraktyer ehnyergyetichyeskogo spyektra povyerkhnostnykh sostoyanii i kinyetika impul'snogo ehffyekta polya. I. / Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1972. - T.6, vyp.8. - S.1495-1501. - Bibliogr.: 7 nazv.

  35. Rzhanov A.V. KHaraktyer ehnyergyetichyeskogo spyektra povyerkhnostnykh sostoyanii i kinyetika impul'snogo ehffyekta polya. II. / Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1972. - T.6, vyp.8. - S.1502-1507. - Bibliogr.: 4 nazv.

  36. Investigation of the structure of a transition layer, formed in an sio/2 film deposited on ge, by the infrared spectroscopic method of multiple frustrated total internal reflection // Kovalevskaya T.I., Nesterova S.N., Rzhanov A.V., Svitashev K.K. // Soviet Physics - Semiconductors. - 1972. - V.5, N 9. - P.1504-1507.

  37. Ryed.: Alyeksandrov L.N. Kinyetika obrazovaniya i struktury tvyerdykh sloyev / otv. ryed. chl.-kor. AN SSSR A.V.Rzhanov. - Novosibirsk: Nauka. Sib. otd-niye, 1972. - 227 c. - Bibliogr.: 414 nazv.

  38. Ryed.: Nyekotoryye problyemy fiziki i khimii povyerkhnosti poluprovodnikov: cb. statyei / otv. ryed. Rzhanov A.V.; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka, 1972. - 250 s.

  39. Ginovkyer A.S. Zapominayusciye ustroistva na osnovye MNOP (myetall-nitrid-okisyel-poluprovodnik)-struktur / Ginovkyer A.S., Rzhanov A.V., Sinitsa S.P. // Mikroehlyektronika. - 1973. - T.2, vyp.5. - S.381-394. - Bibliogr.: 68 nazv.

  40. Isslyedovaniye i granitsy razdyela gyermanii-sul'fid gyermaniya myetodom difraktsii myedlyennykh ehlyektronov / Rzhanov A.V., Ol'shanyetskii B.Z., Vasil'yeva L.L., Ryepinskii S.M. // Fizika i tyekhnika poluprovodnikov. - 1973. - T.7, N 9. - S.1727-1731. - Bibliogr.: 6 nazv.

  41. Ol'shanyetskii B.Z. O strukturye grani (100) kryemniya poslye okislyeniya i pri vysokikh tyempyeraturakh / Ol'shanyetskii B.Z., Rzhanov A.V., EHdyel'man F.L. // Fizika i tyekhnika poluprovodnikov. - 1973. - T.7, N 12. - S.2312-2314. - Bibliogr.: 6 nazv.

  42. Rzhanov A.V. Kommyentiruyet diryektor // Za nauku v Sibiri. - 1973. - N 14. - S.4-5.

  43. Fiziko-khimichyeskiye i ehlyektrofizichyeskiye svoistva sistyemy gyermanii - tyermichyeskaya dvuokis' gyermaniya. I. / Drozdov V.N., Kovalyevskaya T.I., Rzhanov A.V., Svitashyev K.K. // Mikroehlyektronika. - 1973. - T.2, vyp.1. - S.52. - Bibliogr.: 20 nazv.

  44. Fiziko-khimichyeskiye i ehlyektrofizichyeskiye svoistva sistyemy gyermanii - tyermichyeskaya dvuokis' gyermaniya. II. EHlyektrofizichyeskiye paramyetry sistyemy / Drozdov V.N., Kovalyevskaya T.I., Rzhanov A.V., Svitashyev K.K. // Mikroehlyektronika. - 1973. - T.2, vyp.2. - S.154-158. - Bibliogr.: 17 nazv.

  45. Pan'kin V.G. Nature of the energy spectrum of surface states and kinetics of the pulse field effect - 2 / Pan'kin V.G., Rzhanova E.S., Rzhanov A.V. // Soviet Physics - Semiconductors. - 1973. - V.6, N 8. - P.1302-1306.

  46. Rzhanov A.V. Nature of the energy spectrum of surface states and kinetics of the pulse field effect - 1 / Rzhanov A.V. // Soviet Physics - Semiconductors. - 1973 - V.6, N 8. - P.1297-1301.

  47. Initsiirovaniye povyerkhnostnoi khimichyeskoi ryeaktsii monokristallichyeskogo gyermaniya s gazoobraznym bromom s pomosc'yu moscnogo argonovogo lazyera / Baklanov M.R., Byetyerov I.M., Ryepinskii, Rzhanov A.V., CHyebotayev V.P., YUrshina N.I. // Doklady Akadyemii nauk SSSR. - 1974. - T.216, vyp.3. - S.524-527.

  48. Fiziko-khimichyeskiye i ehlyektrofizichyeskiye svoistva sistyemy gyermanii - pirolitichyeskaya dvuokis' gyermaniya / Drozdov V.N., Kovalyevskaya T.I., Rzhanov A.V., Svitashyev K.K. // Mikroehlyektronika. - 1974. - T.3, vyp.5. - S.404-412. - Bibliogr.: 17 nazv.

  49. Olshanetsky B.Z. Structure of the (100) face of Si after oxidation and at high temperatures / Olshanetsky B.Z.; Rzhanov A.V.; Edelman F.L. // Soviet Physics-Semiconductors. - 1974. - Vol.7, N 12. - P.1538-1539. - Bibliogr.: 6 ref.

  50. Investigation of the interface between Ge and GeS by the low-energy electron diffraction method / Rzhanov A.V., Olshanetsky B.Z., Vasileva L.L., Repinsky S.M. // Soviet Physics-Semiconductors. - 1974. - Vol.7, N 9, - P.1154-1156. - Bibliogr.: 6 ref.

  51. Borodovskii P.A. Puti sozdaniya intyegral'nykh skhyem SVCH-diapazona / Borodovskii P.A., Rzhanov A.V. // Mikroehlyektronika. - 1975. - T.4, vyp.6. - S.548-560. - Bibliogr.: 35 nazv.

  52. Kovalyevskaya T.YE. Svoistva struktur Ge-Al2O3, poluchyennykh myetodom ryeaktivnogo katodnogo raspylyeniya / Kovalyevskaya T.YE., Ovsyuk V.N., Rzhanov A.V. // Mikroehlyektronika. - 1975. - T.4, vyp.2. - S.185-188. - Bibliogr.: 12 nazv.

  53. Rzhanov A.V. Brat' v raschyet opyt / Rzhanov A.V. // Sovyetskaya Sibir'. - 1975. - 13 maya.

  54. Rzhanov A.V. Nyekotoryye zadachi nauchnogo priborostroyeniya // Vyestnik Akadyemii nauk SSSR. - 1975. - N 8. - C.13-15.

  55. Rzhanov A.V. Sovmyestityel'stvo - rastochityel'nost' ili ehkonomiya? // Lityeraturnaya gazyeta. - 1975. - 18 iyunya (N 25). - S.2.

  56. EHllipsomyetrichyeskiye myetody kontrolya v mikroehlyektronikye / Rzhanov A.V., Svitashyev K.K., Syemyenyenko A.I., Syemyenyenko L.V., Sokolov V.K. // Mikroehlyektronika. - 1975. - T.4, Vyp.1. - S.3-24. - Bibliogr.: 69 nazv.

  57. Gritsenko V.A. Kinetic of noneqilibreum processes formed by Frenkel effect in high electric fields / Gritsenko V.A., Rhzanov A.V. // Journal of Technical Physics (Sov). - 1975. - V.46, N 10. - P.2155-2158.

  58. Rzhanov A.V. Continuous spectra of energy and cross sections of surface states on the germanium-germanium dioxide interface / Rzhanov A.V. // Physica status solidi (a). - 1975. - V.31, N 1. - P.323-330. - Bibliogr.: 18 ref.

  59. Ryed.: EHlyemyentarnyye fiziko-khimichyeskiye protsyessy na povyerkhnosti monokristallichyeskikh poluprovodnikov: cb. statyei / Otv. ryed. Rzhanov A.V.; Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka, 1975. - 187 s.

  60. Gyermaniyevyi MDP-tranzistor / Kvon Zye Don, Nyeizvyestnyi I.G., Ovsyuk V.N., Rzhanov A.V. // Mikroehlyektronika. - 1976. - T.5, vyp.4. - S.363-366. - Bibliogr.: 10 nazv.

  61. Isslyedovaniye khyemosorbtsii atoma kisloroda na povyerkhnosti (III) i (I00) gyermaniya myetodami RMKH i PPDP/2 / Volokitin A.I., Gadiyak G.V., Karpushin A.A., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1976. - T.10, Vyp.3. - S.436-442. - Bibliogr.: 16 nazv.

  62. Isslyedovaniye khyemosorbtsii atoma kisloroda na povyerkhnosti (III) i (I00) gyermaniya myetodami PPDP/2 / Volokitin A.I., Gadiyak G.V., Karpushin A.A., Morokov YU.N., Ryepinskii S.M., Rzhanov A.V. // Fizika i tyekhnika poluprovodnikov. - 1976. - T.10, Vyp.10. - S.1866-1871. - Bibliogr.: 16 nazv.

  63. Rzhanov A.V. Zvyen'ya nyerazorvannoi tsyepi // Za nauku v Sibiri. - 1976. - 20 maya.

  64. Rzhanov A.V. Uchyenyi i tyekhnichyeskii progryess / Rzhanov A.V. // Lityeraturnaya gazyeta. - 1976. - 6 okt. (N 40).

  65. Ryed.: Svoistva struktur myetall - diehlyektrik - poduprovodnik / ryed.: Rzhanov A.V.; Kovalyevskaya T.YE., Nyeizvyestnyi I.G.; In-t fiziki poluprovodnikov. - M.: Nauka, 1976. - 279 s.

  66. Investigation of chemisorptions of an oxygen atom on (111) and (100) germanium surfaces by extended Hackle theory and complete neglect of differential overlap methods / Volokitin A.I., Gadiyak G.V., Karpushin A.A., Morokov Yu.N., Repinskii S.M., Rzhanov A.V. // Soviet Physics: Semiconductors. - 1976. - V.10, N 3. - P.260-265. - Bibliogr.: 16 ref.

  67. Investigation of chemisorptions of oxygen molecule on (111) and (100) germanium surfaces by method of complete neglect of differential overlap / Volokitin A.I., Gadiyak G.V., Karpushin A.A., Morokov Yu.N., Repinskii S.M., Rzhanov A.V. // Soviet Physics: Semiconductors. - 1976. - V.10, N 3. - P.1113-1116. - Bibliogr.: 16 ref.

  68. Ryed.: Stroityelyev S.A. Kristallokhimichyeskii aspyekt tyekhnologii poluprovodnikov / Stroityelyev S.A.; otv. ryed. Rzhanov A.V.; Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka. Sib. otd-niye, 1976. - 191 c.

  69. Guzyev A.A. Isslyedovaniye protsyessov zakhvata nosityelyei zaryada v MNOP-strukturakh s tunnyel'no-tonkim sloyem dvuokisi kryemniya / Guzyev A.A., Kuryshyev G.L., Rzhanov A.V. // Mikroehlyektronika. - 1977. - T.6, vyp.1. - S.27-32. - Bibliogr.: 6 nazv.

  70. Guzyev A.A. Podvizhnost' dyrok v invyersionnykh kanalakh kryemniyevykh MNOP-struktur s tunnyel'no-tonkim sloyem dvuokisi kryemniya / Guzyev A.A., Kuryshyev G.L., Rzhanov A.V. // Mikroehlyektronika. - 1977. - T.6, vyp.1. - S.33-39. - Bibliogr.: 7 nazv.

  71. K tyeorii modulyatsionnoi ehllipsomyetrii / Arkhipyenko A.V., Blyumkina YU.A., Rzhanov A.V., Svitashyev A.G. // Doklady Akadyemii nauk SSSR. - 1977. - T.235, vyp.2. - C.323-326.

  72. Rzhanov A.V. Cistyemy pamyati na osnovye MDP-MNOP-struktur / Rzhanov A.V., Sinitsa S.P. // Mikroehlyektronika. - 1977. - T.6, vyp.6. - S.491-502. - Bibliogr.: 5 nazv.

  73. Rzhanov A.V. EHlyektronnyye protsyessy na granitsye razdyela poluprovodnik-diehlyektrik i v strukturakh myetall-diehlyektrik-poluprovodnik / Rzhanov A.V., Nakhmanson R.S., Nyeizvyestnyi I.G. // Fundamyental'nyye isslyedovaniya. Fiziko-matyematichyeskiye i tyekhnichyeskiye nauki. - M.: Nauka, Sib. otd-niye, 1977. - C.144-152.

  74. Indium antimonite (112) surface structure / Edelman F.L., Olchanetscy B.Z., Rzhanov A.V., Shklyayev A.A. // Intern. conference on solid surfaces, III (Vienna, 1977). - Vienna, 1977. - P.2411-2414.

  75. Rzhanov A.V. Ellipsometry as a tool for investigations of surface and interface phenomena / Rzhanov A.V. // Intern. conference on solid surfaces, III (Vienna, 1977). - Vienna, 1977. - P.655-662.

  76. Theory of modulation ellipsometry  / Arkhipenko A.V., Blyumkina Yu.A., Rzhanov A.V., Svitashev K.K. // Soviet Physics - Doklady. - 1977. - V.22, N 7. - P.402-404.

  77. Vliyaniye tyermopolyevykh tsiklov na kharaktyeristiki MOP tranzistora so svyerkhtonkim podzatvornym okislom / Gurtov V.A., Frantsuzov A.A., Rzhanov A.V., Salyakin A.B. // Mikroehlyektronika. - 1978. - T.7, Vyp.3. - S.281-283. - Bibliogr.: 4 nazv.

  78. Gritsyenko V.A. Anomal'noye rassyeyaniye fotoinzhyektirovannykh ehlyektronov v amorfnoi plyenkye / Gritsyenko V.A., Mogil'nikov K.P., Rzhanov A.V. // Pis'ma v zhurnal tyekhnichyeskoi fiziki. - 1978. - T.27, vyp.7. - S.400-402. - Bibliogr.: 6 nazv.

  79. Rzhanov A.V. Pyeryevospityvat' / Rzhanov A.V. // Lityeraturnaya gazyeta. - 1978. - 15 marta (N 11).

  80. Rzhanov A.V. Atomno-molyekulyarnyye protsyessy na povyerkhnosti poluprovodnika i na granitsye poluprovodnik-diehlyektrik / Rzhanov A.V., Ryepinskii S.M. // ZHurnal fizichyeskoi khimii. - 1978. - T.52, N 12. - C.3044-3049. - Bibliogr.: 22 nazv.

  81. Gritsenko V.A. Anomalous scattering of photo injected electrons in amorphous film / Gritsenko V.A., Mogilnikov K.P., Rhzanov A.V. // Journal of Experimental and Theoretical Physics. Letters. - 1978. - V.27, N 7. - P.375-378. - Bibliogr.: 7 ref.

  82. Rzhanov A.V. Electron transport in silicon oxynitride / Rzhanov A.V., Mogilnikov K.P., Gritsenko V.A. // Physics of SiO2 and its interfaces. - New York: Pergamon Press, 1978. - P.40-45. - Bibliogr.: 5 ref.

  83. Rzhanov A.V. Germanium MIS structures / Rzhanov A.V., Neizvestny I.G. // Thin Solid Films. - 1978. - Vol.58, N 1. - P.37-42. - Bibliogr.: 6 ref.

  84. Ryed.: Alyeksandrov L.N. Kinyetika obrazovaniya i struktury tvyerdykh sloyev / Otv. ryed. chl.-kor. AN SSSR A.V.Rzhanov. - Novosibirsk: Nauka. Sib. otd-niye, 1978. - 227 c. - Bibliogr.: 414 nazv.

  85. Ryed.: Problyemy fizichyeskoi khimii povyerkhnosti poluprovodnikov: sb. nauch. tr. / Otv. ryed. A.V. Rzhanov; AN SSSR, Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: Nauka. Sib. otd-niye, 1978. - 288 s.

  86. Ryed.: Fizika tonkoplyenochnykh sistyem: sb. nauch. tr. / nauchn. ryed. Rzhanov A.V.; Sib. otd-niye, In-t fiziki poluprovodnikov. - Novosibirsk: In-t fiziki poluprovodnikov SO AN SSSR, 1978. - 66 s.

  87. Vliyaniye ehlyektronnogo obluchyeniya na khollovskuyu podvizhnost' dyrok v invyersionnykh sloyakh MOP struktur so svyerkhtonkim podzatvornym diehlyektrikom / Guzyev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Myezhdunar. konf. po radiatsionnoi fizikye poluprovodnikov i rodstvyennykh matyerialov (Tbilisi, 13-19 syent. 1979). - Tbilisi, 1979. - C.133.

  88. Gritsyenko A.V. Kinyetika nyeravnovyesnykh protsyessov, obuslovlyennykh ehffyektom Fryenyelya v sil'nom ehlyektrichyeskom polye / Gritsyenko A.V., Rzhanov A.V. // ZHurnal tyekhnichyeskoi fiziki. - 1979. - T.46, vyp.10.- S.2155-2161. - Bibliogr.: 11 nazv.

  89. Guzyev A.A. Podvizhnost' dyrok v kryemniyevykh MDP-strukturakh v oblasti slaboi invyersii / Guzyev A.A., Rzhanov A.V. // Mikroehlyektronika. - 1979. - T.8, vyp.1. - S.56-63. - Bibliogr.: 14 nazv.

  90. Osnovy ehllipsomyetrii / Rzhanov A.V. (otv. ryed.), Svitashyev K.K., Syemyenyenko A.I., Syemyenyenko A.I., Sokolov V.K. - Novosibirsk: Nauka, 1979. - 422 s. - Bibliogr.: 875 nazv.
    Oglavlyeniye knigi

  91. Rzhanov A.V. EHlyektronnyye protsyessy na povyerkhnosti poluprovodnikov / Rzhanov A.V. - M.: Nauka, 1979. - 480 s.

  92. Guzev A.A. Hole mobility in silicon mos structures in the weak inversion region / Guzev A.A., Rzhanov A.V. // Soviet Microelectronics [engl. transl. of Mikroelektronika]. - 1979. - V.8, N 1. - P.40-45.

  93. Hole mobility in inversion layers of MOS structures with super thin gate dielectric / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Physica Status Solidi (a). - 1979. - V.56, N 1. - P.61-73. - Bibliogr.: 27 ref.

  94. Hole mobility in inversion on layers MOS transistor / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantzuzov A.A. // Physica Status Solidi (a). - 1979. - V.56, N 1. - P.37-46. - Bibliogr.: 10 ref.

  95. Rzhanov A.V. Ellipsometric techniques to study surfaces and thin films / Rzhanov A.V., Svitashev K.K. // Advances in Electronics and Electron Physics. - 1979. - V.49. - P.1-83. - Bibliogr.: 231 ref.

  96. Select this item for viewing value and gradient distribution of the quasi-Fermi level in MOS transistor channels / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantsuzov A.A. // Physica Status Solidi (a). - 1979. - V.56, N 1. - P.37-46. - Bibliogr.: 12 ref.

  97. The study of hall mobility in inversion channel of MOS structures / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantzuzov A.A. // III Inter. Conf. "Electronic properties of twodimensional systems". - Japan, 1979. - P.247.

  98. Value and gradient distribution of guise Fermi level in MOS transistor channel / Guzev A.A., Gurtov V.A., Rzhanov A.V., Frantzuzov A.A. // Physica Status Solidi (a). - 1979. - V.56, N 1. - P.37-47. - Bibliogr.: 8 ref.
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Scientific schools in NSC A.V.Rzhanov | Lityeratura o zhizni i dyeyatyel'nostiPrepared by Viktoriya Luk'yanova and Syergyei Kann  
  
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