Contributors ................................................... ix
Preface ........................................................ xi
1 Theory and Modeling of Oxide Semiconductors .................. 1
John L. Lyons, Anderson Janotti, and Chris G. Van de Walle
1 Introduction .............................................. 1
2 Theoretical Approach ...................................... 6
3 Zinc Oxide ............................................... 13
4 Tin Dioxide .............................................. 22
5 Titania .................................................. 24
6 Indium Oxide ............................................. 27
7 Summary and Outlook ...................................... 28
Acknowledgments ............................................. 29
References .................................................. 29
2 Open Volume Defects: Positron Annihilation Spectroscopy ..... 39
Filip Tuomisto
1 Introduction ............................................. 39
2 Positron Annihilation Spectroscopy ....................... 41
3 Simple Vacancy Defects ................................... 48
4 Self-Healing Properties of ZnO: Vacancy Migration and
Clustering ............................................... 55
5 Summary .................................................. 62
References .................................................. 63
3 Bulk Growth and Impurities .................................. 67
Lasse Vines and Andrej Kuznetsov
1 Introduction ............................................. 67
2 Bulk Oxide Semiconductor Synthesis ....................... 68
3 Impurities in ZnO ........................................ 74
4 Impurity Diffusion and Radiation Phenomena in ZnO ........ 85
5 Summary .................................................. 98
References .................................................. 99
4 Surfaces and Interfaces of Zinc Oxide ...................... 105
Leonard J. Brillson
1 Introduction ............................................ 105
2 ZnO Surfaces ............................................ 107
3 ZnO Interfaces .......................................... 114
4 Ohmic Contacts .......................................... 139
5 Nanostructures .......................................... 142
6 Heterojunctions ......................................... 147
7 New Directions .......................................... 149
8 Concluding Remarks ...................................... 150
Acknowledgment ............................................. 150
References ................................................. 151
5 Transparent Conductive Oxides for Transparent Electrode
Applications ............................................... 159
Tadatsugu Minami
1 Introduction ............................................ 159
2 Properties Required in Transparent Electrode
Applications ............................................ 160
3 TCO Film Materials and Deposition Techniques ............ 163
4 Electrical Properties of TCO Films ...................... 178
5 Optical Properties of TCO Films ......................... 189
6 Conclusions ............................................. 193
References ................................................. 194
6 The Physics of Copper Oxide (Cu20) ......................... 201
Bruno K. Meyer, Angelika Polity, Daniel Reppin, Martin
Becker, Philipp Hering, Benedikt Kramm, Peter J. Klar,
Thomas Sander, Christian Reindl, Christian Heiliger,
Markus Heinemann, Christian Müller, and Carsten Ronning
1 Introduction ............................................ 201
2 Properties of Cu20 ...................................... 203
3 Defects in Cu20 ......................................... 210
4 Electrical and Optical Data ............................. 213
5 Copper Oxide-Related Alloys ............................. 221
6 Conclusions ............................................. 221
Acknowledgment ............................................. 222
References ................................................. 222
7 Transition Metal-Doped Magnetic Oxides ..................... 227
Cheng Song and Feng Pan
1 Introduction ............................................ 227
2 Origin of Magnetic Ordering in DMOs ..................... 230
3 New Physics and Prototype Devices ....................... 242
4 Concluding Remarks ...................................... 253
Acknowledgments ............................................ 253
References ................................................. 253
8 Semiconducting Metal Oxides Based Gas Sensors .............. 261
Katharina Grossmann, Udo Weimar, and Nicolae Barsan
1 Introduction ............................................ 261
2 Working Principle ....................................... 264
3 n-Type SMOX ............................................. 265
4 p-Type SMOX ............................................. 267
5 Operando Approach ....................................... 269
6 Examples of Operando Investigations ..................... 271
7 Doping .................................................. 276
8 Conclusion .............................................. 280
References ................................................. 280
9 Oxide Thin-Film Transistors: Device Physics ................ 283
John F. Wager and Bao Yeh
1 Introduction ............................................ 283
2 Static (DC) Modeling .................................... 284
3 Dynamic Modeling ........................................ 293
4 Nonideal Effects Beyond the Basic Static (DC) Model ..... 303
5 TCAD Modeling ........................................... 309
6 Conclusions ............................................. 313
Acknowledgment ............................................. 313
References ................................................. 314
Index ......................................................... 317
Contents of Volumes in this Series ............................ 329
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