Sailor M.J. Porous silicon in practice: preparation, characterization and applications (Weinheim, 2012). - ОГЛАВЛЕНИЕ / CONTENTS
Навигация

Архив выставки новых поступлений | Отечественные поступления | Иностранные поступления | Сиглы
ОбложкаSailor M.J. Porous silicon in practice: preparation, characterization and applications. - Weinheim: Wiley-VCH, 2012. - xii, 249 p.: ill. - Incl. bibl. ref. - Ind.: p.245-249. - ISBN 978-3-527-31378-5
 

Оглавление / Contents
 
Preface ........................................................ XI

1  Fundamentals of Porous Silicon Preparation ................... 1
   1.1  Introduction ............................................ 1
   1.2  Chemical Reactions Governing the Dissolution of
        Silicon ................................................. 2
        1.2.1  Silicon Oxides and Their Dissolution in HF ....... 3
        1.2.2  Silicon Oxides and Their Dissolution in Basic
               Media ............................................ 3
        1.2.3  Silicon Hydrides ................................. 4
   1.3  Experimental Set-up and Terminology for
        Electrochemical Etching of Porous Silicon ............... 5
        1.3.1  Two-Electrode Cell ............................... 6
        1.3.2  Three-Electrode Cell ............................. 6
   1.4  Electrochemical Reactions in the Silicon System ......... 7
        1.4.1  Four-Electron Electrochemical Oxidation of
               Silicon .......................................... 8
        1.4.2  Two-Electron Electrochemical Oxidation of
               Silicon .......................................... 9
        1.4.3  Electropolishing ................................ 10
   1.5  Density, Porosity, and Pore Size Definitions ........... 11
   1.6  Mechanisms of Electrochemical Dissolution and Pore
        Formation .............................................. 13
        1.6.1  Chemical Factors Controlling the
               Electrochemical Etch ............................ 16
        1.6.2  Crystal Face Selectivity ........................ 18
        1.6.3  Physical Factors Controlling the
               Electrochemical Etch ............................ 18
   1.7  Resume of the Properties of Crystalline Silicon ........ 19
        1.7.1  Orientation ..................................... 19
        1.7.2  Band Structure .................................. 20
        1.7.3  Electrons and Holes ............................. 21
        1.7.4  Photoexcitation of Semiconductors ............... 22
        1.7.5  Dopants ......................................... 23
        1.7.6  Conductivity .................................... 24
        1.7.7  Evolution of Energy Bands upon Immersion in an
               Electrolyte ..................................... 24
        1.7.8  Charge Transport at p-Type Si Liquid
               Junctions ....................................... 26
        1.7.9  Idealized Current-Voltage Curve at p-Type
               Liquid functions ................................ 26
        1.7.10 Energetics at n-Type Si Liquid Junctions ........ 28
        1.7.11 Idealized Current-Voltage Curve at n-type
               Liquid Junctions ................................ 28
   1.8  Choosing, Characterizing, and Preparing a Silicon
        Wafer .................................................. 28
        1.8.1  Measurement of Wafer Resistivity ................ 29
        1.8.2  Cleaving a Silicon Wafer ........................ 34
        1.8.3  Determination of Carrier Type by the Hot-Probe
               Method .......................................... 36
        1.8.4  Ohmic Contacts .................................. 36
               1.8.4.1  Making an Ohmic Contact by Metal
                        Evaporation ............................ 39
               1.8.4.2  Making an Ohmic Contact by Mechanical
                        Abrasion ............................... 40
      References ............................................... 40
2  Preparation of Micro-, Meso-, and Macro-Porous Silicon
   Layers ...................................................... 43
   2.1  Etch Cell: Materials and Construction .................. 43
   2.2  Power Supply ........................................... 44
   2.3  Other Supplies ......................................... 48
   2.4  Safety Precautions and Handling of Waste ............... 48
   2.5  Preparing HF Electrolyte Solutions ..................... 50
   2.6  Cleaning Wafers Prior to Etching ....................... 51
        2.6.1  No Precleaning .................................. 51
        2.6.2  Ultrasonic Cleaning ............................. 51
        2.6.3  RCA Cleaning .................................... 52
        2.6.4  Removal of a Sacrificial Porous Layer with
               Strong Base ..................................... 52
   2.7  Preparation of Microporous Silicon from a p-Type
        Wafer .................................................. 53
   2.8  Preparation of Mesoporous Silicon from a p++-Type
        Wafer .................................................. 57
   2.9  Preparation of Macroporous, Luminescent Porous
        Silicon from an n-Type Wafer (Frontside
        Illumination) .......................................... 59
        2.9.1  Power Supply Limitations ........................ 63
   2.10 Preparation of Macroporous, Luminescent Porous
        Silicon from an n-Type Wafer (Back Side
        Illumination) .......................................... 64
   2.11 Preparation of Porous Silicon by Stain Etching ......... 68
   2.12 Preparation of Silicon Nanowire Arrays by Metal-
        Assisted Etching ....................................... 73
   References .................................................. 75
3  Preparation of Spatially Modulated Porous Silicon Layers .... 77
   3.1  Time-Programmable Current Source ....................... 78
        3.1.1  Time Resolution Issues .......................... 79
        3.1.2  Etching with an Analog Source ................... 80
        3.1.3  Etching with a Digital Source ................... 82
   3.2  Pore Modulation in the z-Direction: Double Layer ....... 83
   3.3  Pore Modulation in the z-Direction: Rugate Filter ...... 83
        3.3.1  Tunability of the Rugate Spectral Peak
               Wavelength ...................................... 88
        3.3.2  Width of the Spectral Band ...................... 92
   3.4  More Complicated Photonic Devices: Bragg Stacks,
        Microcavities, and Multi-Line Spectral Filters ......... 94
        3.4.1  Bragg Reflector ................................. 96
        3.4.2  Multiple Spectral Peaks-"Spectral Barcodes" .... 100
   3.5  Lateral Pore Gradients (in the x-γ Plane) ............. 104
   3.6  Patterning in the x-γ Plane Using Physical or
        Virtual Masks ......................................... 108
        3.6.1  Physical Masking Using Photoresists ............ 109
        3.6.2  Virtual Masking Using Photoelectrochemistry .... 112
   3.7  Other Patterning Methods .............................. 114
        References ............................................ 114
4  Freestanding Porous Silicon Films and Particles ............ 119
   4.1  Freestanding Films of Porous Silicon-"Lift-offs" ...... 120
   4.2  Micron-scale Particles of Porous Silicon by
        Ultrasonication of Lift-off Films ..................... 120
   4.3  Core-Shell (Si/SiO2) Nanoparticles of Luminescent
        Porous Silicon by Ultrasonication ..................... 126
        References ............................................ 130
5  Characterization of Porous Silicon ......................... 133
   5.1  Gravimetric Determination of Porosity and Thickness ... 134
        5.1.1  Errors and Limitations of the Gravimetric
               Method ......................................... 137
   5.2  Electron Microscopy and Scanned Probe Imaging
        Methods ............................................... 138
        5.2.1  Cross-Sectional Imaging ........................ 138
        5.2.2  Plan-View (Top-Down) Imaging ................... 139
   5.3  Optical Reflectance Measurements ...................... 139
        5.3.1  Instrumentation to Collect Reflectance Data .... 139
               5.3.1.1  Reflectance Optics .................... 140
               5.3.1.2  Wavelength Calibration ................ 142
        5.3.2  Principles of Fabry-Perot Interference ......... 143
        5.3.3  Analyzing Fabry-Perot Interference Spectra
               by Fourier Transform: the RIFTS Method ......... 150
               5.3.3.1  Preparation of Spectrum for Fast
                        Fourier Transform ..................... 151
               5.3.3.2  Interpretation of the Fast Fourier
                        Transform ............................. 153
        5.3.4  Thickness and Porosity by the Spectroscopic
               Liquid Infiltration Method (SLIM) .............. 154
               5.3.4.1  Bruggeman Effective Medium
                        Approximation ......................... 155
               5.3.4.2  Determination of Thickness and
                        Porosity by SLIM ...................... 156
               5.3.4.3  Determination of Index of Refraction
                        of the Porous Skeleton ................ 156
               5.3.4.4  Effect of Skeleton Index on Porosity
                        Determined by SLIM .................... 158
        5.3.5  Comparison of Gravimetric Measurement with
               SLIM for Porosity and Thickness
               Determination .................................. 159
        5.3.6  Analysis of Double-Layer Structures Using
               RIFTS .......................................... 162
   5.4  Porosity, Pore size, and Pore Size Distribution by
        Nitrogen Adsorption Analysis (BET, BJH, and BdB
        Methods) .............................................. 167
   5.5  Measurement of Steady-State Photoluminescence
        Spectra ............................................... 170
        5.5.1  Origin of Photoluminescence from Porous
               Silicon ........................................ 170
               5.5.1.1  Tunability of the Photoluminescence
                        Spectrum .............................. 171
               5.5.1.2  Mechanisms of Photoluminescence ....... 171
        5.5.2  Instrumentation to Acquire Steady-State
               Photoluminescence Spectra ...................... 173
   5.6  Time-Resolved Photoluminescence Spectra ............... 173
        5.6.1  Long, Nonexponential Excited State Lifetimes ... 173
        5.6.2  Influence of Surface Traps ..................... 175
   5.7  Infrared Spectroscopy of Porous Silicon ............... 176
        5.7.1  Characteristic Group Frequencies for Porous
               Silicon ........................................ 176
        5.7.2  Measurement of FTIR Spectra of Porous
               Silicon ........................................ 178
               5.7.2.1  Transmission Mode Measurement Using
                        the Standard Etch Cell ................ 179
   References ................................................. 181
6  Chemistry of Porous Silicon ................................ 189
   6.1  Oxide-Forming Reactions of Porous Silicon ............. 190
        6.1.1  Temperature Dependence of Oxidation Using
               Gas-Phase Oxidants ............................. 190
        6.1.2  Thermal (Air) Oxidation ........................ 191
        6.1.3  Ozone Oxidation ................................ 192
        6.1.4  High-Pressure Water Vapor Annealing ............ 193
        6.1.5  Oxidation in Aqueous Solutions ................. 193
               6.1.5.1  Aqueous Oxidation Induced by
                        Cationic Surfactants .................. 194
        6.1.6  Electrochemical Oxidation in Aqueous Mineral
               Acids .......................................... 194
        6.1.7  Oxidation by Organic Species: Ketones,
               Aldehydes, Quinones, and Dimethylsulfoxide ..... 195
        6.1.8  Effect of Chemical Oxidation on Pore
               Morphology ..................................... 196
   6.2  Biological Implications of the Aqueous Chemistry of
        Porous Silicon ........................................ 198
   6.3  Formation of Silicon-Carbon Bonds ..................... 200
        6.3.1  Thermal Hydrosilylation to Produce Si-C
               Bonds .......................................... 200
        6.3.2  Working with Air- and Water-Sensitive
               Compounds-Schlenk Line Manipulations ........... 201
        6.3.3  Classification of Surface Chemistry by
               Contact Angle .................................. 203
        6.3.4  Micro wave-Assisted Hydrosilylation to
               Produce Si-C Bonds ............................. 204
        6.3.5  Chemical or Electrochemical Grafting to
               Produce Si-C Bonds ............................. 206
   6.4  Thermal Carbonization Reactions ....................... 208
        6.4.1  Thermal Degradation of Acetylene to form
               "Hydrocarbonized" Porous Silicon ............... 208
        6.4.2  Thermal Degradation of Polymers to Form
               "Carbonized" Porous Silicon .................... 209
   6.5  Conjugation of Biomolecules to Modified Porous
        Silicon ............................................... 211
        6.5.1  Carbodiimide Coupling Reagents ................. 211
        6.5.2  Attachment of PEG to Improve
               Biocompatibility ............................... 212
        6.5.3  Biomodification of "Hydrocarbonized" Porous
               Silicon ........................................ 213
        6.5.4  Silanol-Based Coupling to Oxidized Porous
               Silicon Surfaces ............................... 215
   6.6  Chemical Modification in Tandem with Etching .......... 217
   6.7  Metallization Reactions of Porous Silicon ............. 218
   References ................................................. 219

Appendix Al. Etch Cell Engineering Diagrams and Schematics .... 229
   Standard or Small Etch Cell-Complete ....................... 229
   Standard Etch Cell Top Piece ............................... 230
   Small Etch Cell Top Piece .................................. 231
   Etch Cell Base (for Either Standard or Small Etch Cell) .... 232
   Large Etch Cell-Complete ................................... 232
   Large Etch Cell Base ....................................... 233
Appendix A2. Safety Precautions When Working with
   Hydrofluoric Acid .......................................... 235
   Hydrofluoric Acid Hazards .................................. 235
   First Aid Measures for HF Contact .......................... 236
   Note to Physician .......................................... 238
   HF Antidote Gel ............................................ 239
   Further Reading ............................................ 239
Appendix A3. Gas Dosing Cell Engineering Diagrams and
   Schematics ................................................. 241
   Gas Dosing Cell Top Piece .................................. 242
   Gas Dosing Cell Middle Piece ............................... 243
   Gas Dosing Cell Bottom Piece ............................... 244

Index ......................................................... 245


Архив выставки новых поступлений | Отечественные поступления | Иностранные поступления | Сиглы
 

[О библиотеке | Академгородок | Новости | Выставки | Ресурсы | Библиография | Партнеры | ИнфоЛоция | Поиск]
  Пожелания и письма: branch@gpntbsib.ru
© 1997-2024 Отделение ГПНТБ СО РАН (Новосибирск)
Статистика доступов: архив | текущая статистика
 

Документ изменен: Wed Feb 27 14:24:06 2019. Размер: 18,971 bytes.
Посещение N 1621 c 23.10.2012